SI5485DU Vishay, SI5485DU Datasheet - Page 4

• Manufacturer Part Number: SI5485DU
• Description: P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

Si5485DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
10
30
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
– Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
T
– Temperature (°C)
25
J
= 150 °C
I
D
0.6
50
= 250 µA
75
0.8
0.01
100
0.1
10
T
1
J
100
0.1
= 25 °C
Safe Operating Area, Junction-to-Ambient
*V
1.0
Single Pulse
T
GS
125
*Limited by r
A
= 25 °C
V
minimum V
DS
New Product
1.2
150
– Drain-to-Source Voltage (V)
DS(on)
1
GS
BVDSS limited
at which r
DS(on)
10
0.10
0.08
0.06
0.04
0.02
0.00
10
40
30
20
50
is specified
0.001
0
0
100 ms
10 s
dc
1 ms
10 ms
1 s
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.01
100
1
V
GS
0.1
– Gate-to-Source Voltage (V)
Time (sec)
2
25 °C
1
S-70655-Rev. B, 09-Apr-07
Document Number: 73779
3
125 °C
10
I
D
4
= 5.9 A
100
1000
5