SI6413DQ Vishay, SI6413DQ Datasheet - Page 3

• Manufacturer Part Number: SI6413DQ
• Description: P-channel 1.8-v G-s Mosfet
• Manufacturer: Vishay

Document Number: 72084
S-22384—Rev. A, 30-Dec-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
0.024
0.018
0.012
0.006
0.000
0.1
30
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 8.8 A
0.2
On-Resistance vs. Drain Current
= 10 V
14
6
V
T
SD
Q
J
g
= 150_C
- Source-to-Drain Voltage (V)
I
0.4
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
12
28
0.6
18
42
0.8
T
V
V
V
J
GS
GS
GS
= 25_C
= 1.8 V
= 2.5 V
= 4.5 V
24
56
1.0
1.2
30
70
New Product
8000
6400
4800
3200
1600
0.06
0.05
0.04
0.03
0.02
0.01
0.00
1.6
1.4
1.2
1.0
0.8
0.6
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
V
I
rss
-25
D
GS
1
= 8.8 A
= 4.5 V
4
T
V
V
0
C
J
GS
DS
- Junction Temperature (_C)
2
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
8
C
3
iss
I
D
Vishay Siliconix
50
= 8.8 A
4
12
75
Si6413DQ
5
100
16
www.vishay.com
125
6
150
20
7
3