SI6413DQ Vishay, SI6413DQ Datasheet - Page 4

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SI6413DQ

Manufacturer Part Number
SI6413DQ
Description
P-channel 1.8-v G-s Mosfet
Manufacturer
Vishay
Datasheet

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Quantity
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VISHAY
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Si6413DQ
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.2
-0.4
0.4
0.2
0.0
0.01
0.1
-50
2
1
10
- 4
-25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
I
D
0
= 400 mA
T
Threshold Voltage
J
- Temperature (_C)
10
25
- 3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
by r
Limited
DS(on)
0.01
100
0.1
10
10
100
1
0.1
- 2
125
Safe Operating Area, Junction-to-Case
Square Wave Pulse Duration (sec)
V
150
DS
New Product
Single Pulse
T
- Drain-to-Source Voltage (V)
10
C
1
- 1
= 25_C
10
60
1
50
40
30
20
10
0
10
- 2
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
dc
10
100
- 1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Time (sec)
- T
t
1
A
= P
t
1
2
DM
Z
thJA
100
thJA
t
t
S-22384—Rev. A, 30-Dec-02
1
2
(t)
Document Number: 72084
= 100_C/W
10
600
100

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