BB1 Renesas Electronics Corporation., BB1 Datasheet - Page 3
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BB1
Manufacturer Part Number
BB1
Description
Compound Transistor On-chip Resistor Npn Silicon Epitaxial Transistor For Mid-speed Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.BB1.pdf
(6 pages)
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BB1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C)
Note 2 PW ≤ 350 µ s, duty cycle ≤ 2 %
BB1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C)
Note 2 PW ≤ 350 µ s, duty cycle ≤ 2 %
BP1J3P
ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C)
Note 2 PW ≤ 350 µ s, duty cycle ≤ 2 %
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
h
h
h
h
h
h
h
h
h
V
V
V
V
V
V
FE1
FE2
FE3
FE1
FE2
FE3
FE1
FE2
FE3
I
I
I
OL
OL
OL
IL
IL
IL
CBO
R
R
CBO
R
R
CBO
R
R
Note 2
Note 2
Note 2
Note 2
Note 2
Note 2
Note 2
Note 2
Note 2
1
2
Note 2
Note 2
Note 2
1
2
Note 2
Note 2
Note 2
1
2
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
CB
CE
CE
CE
IN
CE
CB
CE
CE
CE
IN
CE
CB
CE
CE
CE
IN
CE
= 5.0 V, I
= 5.0 V, I
= 5.0 V, I
= 30 V, I
= 2.0 V, I
= 2.0 V, I
= 2.0 V, I
= 5.0 V, I
= 30 V, I
= 2.0 V, I
= 2.0 V, I
= 2.0 V, I
= 5.0 V, I
= 30 V, I
= 2.0 V, I
= 2.0 V, I
= 2.0 V, I
= 5.0 V, I
Data Sheet D11739EJ2V0DS
E
C
E
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
= 0
= 0
= 0
= 0.5 A
= 0.3 A
= 0.2 A
= 0.1 A
= 0.5 A
= 0.7 A
= 100 µ A
= 0.1 A
= 0.5 A
= 0.7 A
= 100 µ A
= 0.1 A
= 0.5 A
= 0.7 A
= 100 µ A
Conditions
Conditions
Conditions
MIN.
MIN.
MIN.
1.54
2.31
100
135
300
300
135
300
300
135
0.7
0.7
80
7
7
TYP.
TYP.
TYP.
0.14
600
700
600
0.3
1.0
1.0
2.2
3.3
10
10
BB1 SERIES
MAX.
MAX.
MAX.
2.86
4.29
100
100
100
0.4
0.3
1.3
1.3
0.3
0.3
0.3
0.3
13
13
Unit
Unit
Unit
nA
kΩ
kΩ
nA
kΩ
kΩ
nA
kΩ
kΩ
V
V
V
V
V
V
−
−
−
−
−
−
−
−
−
3