BB1 Renesas Electronics Corporation., BB1 Datasheet - Page 4

• Manufacturer Part Number: BB1
• Description: Compound Transistor On-chip Resistor Npn Silicon Epitaxial Transistor For Mid-speed Switching
• Manufacturer: Renesas Electronics Corporation.

BB1L3N
ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C)
Note 2 PW ≤ 350 µ s, duty cycle ≤ 2 %
BB1A4M
ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C)
Note 2 PW ≤ 350 µ s, duty cycle ≤ 2 %
4
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Collector cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Low level input voltage
Input resistance
E-to-B resistance
Parameter
Parameter
Symbol
Symbol
h
h
h
h
h
h
V
V
V
V
FE1
FE2
FE3
FE1
FE2
FE3
I
I
OL
OL
IL
IL
CBO
R
R
CBO
R
R
Note 2
Note 2
Note 2
Note 2
Note 2
Note 2
Note 2
1
2
Note 2
Note 2
Note 2
1
2
V
V
V
V
V
V
V
V
V
V
V
V
CB
CE
CE
CE
IN
CE
CB
CE
CE
CE
IN
CE
= 5.0 V, I
= 5.0 V, I
= 30 V, I
= 2.0 V, I
= 2.0 V, I
= 2.0 V, I
= 5.0 V, I
= 30 V, I
= 2.0 V, I
= 2.0 V, I
= 2.0 V, I
= 5.0 V, I
Data Sheet D11739EJ2V0DS
E
C
E
C
C
C
C
C
C
C
C
C
= 0
= 0
= 0.2 A
= 0.2 A
= 0.1 A
= 0.5 A
= 0.7 A
= 100 µ A
= 0.1 A
= 0.5 A
= 0.7 A
= 100 µ A
Conditions
Conditions
MIN.
MIN.
3.29
300
300
135
300
300
135
7
7
7
TYP.
TYP.
4.7
10
10
10
MAX.
MAX.
6.11
100
100
0.3
0.3
0.3
0.3
13
13
13
BB1 SERIES
Unit
Unit
nA
kΩ
kΩ
nA
kΩ
kΩ
−
−
−
V
V
−
−
−
V
V