BZD142W NXP Semiconductors, BZD142W Datasheet - Page 3

• Manufacturer Part Number: BZD142W
• Description: Zenblocktm; Zener With Integrated Blocking Diode
• Manufacturer: NXP Semiconductors

Philips Semiconductors
ELECTRICAL CHARACTERISTICS ZENER/TVS
T
Notes
1. To complete the type number the suffix is added to the basic type number, e.g. BZD142W-68.
2. Non-repetitive peak reverse current in accordance with “IEC 60060-1, Section 8” (10/1000 s pulse); see Fig.5.
ELECTRICAL CHARACTERISTICS BLOCKING DIODE
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.4.
2001 Oct 10
SUFFIX
68
100
160
180
200
V
I
C
R
R
NUMBER
SYMBOL
SYMBOL
j
j
R
(BR)R
= 25 C unless otherwise specified.
= 25 C unless otherwise specified.
d
th j-tp
th j-a
ZenBlock
integrated blocking diode
TYPE
For more information please refer to the “General Part of associated Handbook” .
(1)
reverse avalanche breakdown
voltage
reverse current
diode capacitance
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
MIN.
WORKING VOLTAGE
149
162
180
TM
61
90
V
; zener with
Z
(V) at I
NOM.
PARAMETER
100
160
180
200
68
test
MAX.
171
198
220
110
75
PARAMETER
TEMPERATURE
S
COEFFICIENT
MIN.
0.07
0.07
0.07
0.07
0.07
Z
(%/K) at I
I
V
V
f = 1 MHz; V
see Fig.3
R
R
R
MAX.
0.12
0.12
0.12
0.12
0.12
= 0.1 mA
= 600 V
= 600 V; T
test
CONDITIONS
3
CURRENT
I
test
R
TEST
j
= 0 V;
= 150 C
10
(mA)
5
5
5
5
V
MAX.
106
139
224
250
277
(CL)R
(V)
CLAMPING
700
note 1
VOLTAGE
MIN.
CONDITIONS
at I
(A)
0.94
0.72
0.45
0.40
0.36
RSM
15
(2)
TYP.
REVERSE CURRENT
I
R
MAX.
Product specification
at STAND-OFF
5
100
( A)
5
5
5
5
5
VALUE
BZD142W
MAX.
VOLTAGE
150
30
at V
V
pF
130
150
160
A
A
UNIT
UNIT
K/W
K/W
56
82
R
(V)