BYQ30E NXP Semiconductors, BYQ30E Datasheet - Page 2

• Manufacturer Part Number: BYQ30E
• Description: Byq30e, Byq30eb, Byq30ed Series Rectifier Diodes Ultrafast, Rugged
• Manufacturer: NXP Semiconductors

Philips Semiconductors
ESD LIMITING VALUE
THERMAL RESISTANCES
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at T
October 1998
Rectifier diodes
ultrafast, rugged
SYMBOL PARAMETER
R
R
SYMBOL PARAMETER
V
I
Q
t
t
V
SYMBOL PARAMETER
V
R
rr1
rr2
F
fr
C
th j-mb
th j-a
rr
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
Forward voltage
Reverse current
Reverse recovered charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
Electrostatic discharge
capacitor voltage
j
= 25 ˚C unless otherwise specified
CONDITIONS
per diode
both diodes
SOT78 package, in free air
SOT404 and SOT428 packages, pcb
mounted, minimum footprint, FR4 board
CONDITIONS
I
I
I
V
V
I
I
I
I
F
F
F
F
F
F
F
R
R
= 8 A; T
= 16 A; T
= 16 A
= 2 A; V
= 1 A; V
= 0.5 A to I
= 1 A; dI
= V
= V
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 k
RWM
RWM
; T
j
R
R
F
= 150˚C
j
/dt = 10 A/ s
= 150˚C
j
R
= 100˚C
30 V; -dI
30 V; -dI
2
= 1 A; I
BYQ30E, BYQ30EB, BYQ30ED series
rec
F
F
/dt = 20 A/ s
/dt = 100 A/ s
= 0.25 A
MIN.
MIN.
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
TYP. MAX. UNIT
0.84
1.12
Product specification
0.3
60
50
20
12
1
4
4
1
-
-
MAX.
8
0.95
1.15
1.25
2.5
0.6
30
11
25
22
3
-
-
-
Rev 1.200
UNIT
K/W
K/W
K/W
K/W
kV
mA
nC
ns
ns
V
V
V
V
A