TPC6012 TOSHIBA Semiconductor CORPORATION, TPC6012 Datasheet - Page 4

• Manufacturer Part Number: TPC6012
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
12
10
10
5
4
3
2
1
0
8
6
4
2
0
1
0.1
0
0
10
3
0.2
Drain-source voltage V DS (V)
25°C
Gate-source voltage V GS (V)
6
4.5
100°C
2.2
1
2.4
Drain current I D (A)
V GS = 2.5 V
1
R
0.4
4.5 V
DS (ON)
I
I
D
D
Ta = −55°C
– V
– V
2
GS
DS
– I
0.6
D
10
Common source
V DS = 10 V
Pulse test
Common source
T a = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
3
V GS = 1.6 V
0.8
2
1.9
1.8
1.7
100
1
4
4
0.5
0.4
0.3
0.2
0.1
20
15
10
5
0
0
0
0
10
2.8
1.5 A
Drain-source voltage V DS (V)
4.5
6
Gate-source voltage V GS (V)
1
2
2.6
V
2
4
I
DS
D
– V
– V
3 A
DS
GS
3
6
I D = 6 A
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = 1.8 V
4
8
2009-08-26
TPC6012
2.2
2.4
2
10
5