TPCF8003 TOSHIBA Semiconductor CORPORATION, TPCF8003 Datasheet - Page 3

• Manufacturer Part Number: TPCF8003
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Drain reverse
current
Forward voltage (diode)
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Characteristics
Characteristics
Pulse (Note 1)
Rise time
Turn-on time
Fall time
Turn-off time
Symbol
(Ta = 25°C)
V
I
DRP
DSF
V
V
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
Q
I
I
C
C
C
Q
GSS
DSS
V
t
t
Q
I
oss
on
off
gs1
DR
t
t
iss
rss
gd
th
r
f
g
= 7.0 A, V
V
V
I
I
V
V
V
V
Duty ≤ 1%, t
V
D
D
V
GS
DS
DS
GS
GS
DS
DD
GS
= 10 mA, V
= 10 mA, V
3
GS
(Ta = 25°C)
= ±12 V, V
= 20 V, V
= 10 V, I
= 2.5 V, I
= 4.5 V, I
= 10 V, V
≈ 16 V, V
Test Condition
5 V
0 V
= 0 V
Test Condition
—
w
D
GS
GS
D
D
GS
GS
GS
= 10 μs
= 200 μA
DS
= 3.5 A
= 3.5 A
= 0 V
= −12 V
= 0 V
= 0 V, f = 1 MHz
= 5 V, I
= 0 V
I
V
D
DD
= 3.5 A
≈ 10 V
D
= 7.0 A
V
OUT
Min
—
—
Min
0.5
20
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8
Typ.
—
—
Typ.
500
155
215
5.2
9.5
1.6
24
14
11
10
23
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4
TPCF8003
Max
−1.2
2010-01-14
±100
28
Max
1.2
10
34
18
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Unit
Unit
A
V
mΩ
nC
nA
μA
pF
ns
V
V