TPCF8003 TOSHIBA Semiconductor CORPORATION, TPCF8003 Datasheet - Page 5

• Manufacturer Part Number: TPCF8003
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
3.0
2.5
1.0
2.0
1.5
0.5
50
40
20
30
10
10
0
0
−80
1
0.1
0
V GS = 4.5 V
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
V GS = 2.5 V
Common source
Pulse test
(2)
(1)
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
t = 5 s
−40
Drain-source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
40
Capacitance – V
1
0
R
DS (ON)
P
D
40
80
– Ta
I D = 1.8, 3.5, 7 A
– Ta
80
10
DS
I D = 1.8, 3.5, 7 A
DS
120
C oss
°
C rss
C iss
(V)
°
C)
120
C)
160
100
160
5
100
1.6
1.2
0.8
0.4
20
16
12
10
8
4
0
−80
1
0
2
0
0
0
Common source
V DS = 10 V
I D = 0.2 mA
Pulse test
V DS
Dynamic input/output characteristics
−0.2
−40
Drain-source voltage V
Ambient temperature Ta (
Total gate charge Q
10
4
−0.4
0
I
DR
V
4.5
th
−0.6
– V
40
8
– Ta
4
1
DS
2.5
−0.8
80
g
8
Common source
Ta = 25°C
Pulse test
DS
V DD = 16 V
Common source
I D = 7 A
Ta = 25°C
Pulse test
(nC)
12
TPCF8003
V GS = 0 V
°
(V)
C)
120
−1
2010-01-14
−1.2
160
16
10
8
6
4
2
0