TPCA8020-H TOSHIBA Semiconductor CORPORATION, TPCA8020-H Datasheet - Page 4

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TPCA8020-H

Manufacturer Part Number
TPCA8020-H
Description
Toshiba Field Effect Transistor Silicon N-channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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100
0.1
10
30
25
20
15
10
10
8
6
4
2
0
5
0
1
0.1
0
0
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
4
4.5
Ta = −55°C
5
Drain-source voltage V
6
Gate-source voltage V
10
1
0.2
Drain current I
100
2
1
3.8
0.4
25
I
I
|Y
D
D
25
fs
– V
– V
| – I
3.4
3
Ta = −55°C
DS
GS
100
D
0.6
D
Common source
Ta = 25°C Pulse test
10
4
GS
DS
(A)
V GS = 2.6 V
0.8
(V)
(V)
5
2.9
2.8
2.7
3.2
3.1
3
100
1.0
6
4
100
0.5
0.4
0.3
0.2
0.1
20
16
12
10
8
4
0
0
1
0.1
0
0
4.5
5
6
Drain-source voltage V
Gate-source voltage V
10
2
0.4
Drain current I
4
4
1
R
V
0.8
DS (ON)
I
DS
D
V GS = 10 V
– V
– V
6
3.8
DS
4.5
GS
– I
1.2
D
3.6
D
10
8
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
TPCA8020-H
V GS = 2.6 V
1.6
(V)
(V)
I D = 7.5 A
10
2006-11-17
3.8
1.9
2.8
3.4
3.2
3
100
12
2.0

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