30QWK2CZ47 TOSHIBA Semiconductor CORPORATION, 30QWK2CZ47 Datasheet - Page 3

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30QWK2CZ47

Manufacturer Part Number
30QWK2CZ47
Description
Toshiba Schottky Barrier Rectifier Stack Trench Schottky Barrier Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
100
160
140
120
100
0.1
0.5
0.3
0.1
10
80
60
40
20
10
0.001
1
0
5
3
1
0.0
0
One cell
One cell
Conduction
angle α
Rectangular
waveform
(one cell)
α 360°
Average output rectified current Io (A)
4
Instantaneous forward voltage v F (V)
0.2
0.01
α = 30°
100°C
8
0.4
Tj = 150°C
12
Tc max – I
Time t (s)
0.1
25°C
r
0.6
th (j-c)
16
i
F
60°
– v
20
75°C
F
0.8
– t
90°
1
o
24
120°
1.0
28
10
1.2
180°
32
100
1.4
36
3
1000
320
280
240
200
160
120
500
300
100
32
28
24
20
16
12
80
40
50
30
10
8
4
0
0
0
1
1
Surge forward current (non-repetitive)
4
Average output rectified current I
8
3
3
Reverse voltage V
α = 30°
12
Number of cycles
5
5
P
F (AV)
16
C
j
10
10
– V
60°
20
– I
R
o
R
90°
24
Ta = 25°C
Single phase full
Sine wave
f = 50 Hz
One cell
30QWK2CZ47
(V)
Conduction
angle α
120°
Rectangular
waveform
(one cell)
30
30
28
α 360°
o
f = 1 MHz
Ta = 25°C
One cell
(typical)
50
50
(A)
32
180°
2006-11-10
100
100
36

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