HN29V102414 Renesas Electronics Corporation., HN29V102414 Datasheet - Page 14

• Manufacturer Part Number: HN29V102414
• Description: 1g And Type Flash Memory More Than 32,113-sector 542,581,248-bit X 2
• Manufacturer: Renesas Electronics Corporation.

HN29V102414 Series
Program (4): Program data PD0 to PD2111 is programmed into the sector of address SA automatically by
internal control circuits. When CA is input, program data PD (m) to PD (m + j) is programmed from CA into
the sector of address SA automatically by internal control circuits. By using program (4), data can be
rewritten for each sector before the following erase. So the column data before programming operation are
either "1" or "0". In this mode, E/W number of times must be counted whenever program (4) execute. After
the programming starts, the program completion can be checked through the RDY/Busy signal and status data
polling. The sector valid data should be included in the program data PD2048 to PD2111.
Status Register Read
The status returns to the status register read mode from standby mode, when CE and OE is V
register read mode, I/O pins output the same operation status as in the status data polling defined in the
function description.
Identifier Read
The manufacturer and device identifier code can be read in the identifier read mode. The manufacturer and
device identifier code is selected with CDE V
12
Sector
address
32767
Serial read (1) (Without CA)
Program (1) (Without CA)
Program (2)
0
0
Memory array
Register
2111
Sector
address
32767
0
IL
Serial read (1) (With CA)
Program (1) (With CA)
0
and V
Column address
Memory array
IH
, respectively.
Register
2111
Sector
address
32767
0
0
Memory array
Serial read (2)
Program (3)
Register
IL
. In the status
2048
2111