HN2A01FE TOSHIBA Semiconductor CORPORATION, HN2A01FE Datasheet
HN2A01FE
Manufacturer Part Number
HN2A01FE
Description
Toshiba Transistor Silicon Pnp Epitaxial Type Pct Process
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.HN2A01FE.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HN2A01FE
Manufacturer:
toshiba
Quantity:
30 000
Audio Frequency General Purpose Amplifier Applications
Maximum Ratings
Electrical Characteristics
Marking
* Total rating
Note: h
Small package (dual type)
High voltage and high current
High h
Excellent h
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
1
6
M1Y
FE
FE
2
5
: h
classification Y(Y): 120~240, GR(G): 200~400 ( ) marking symbol
Characteristic
FE
Characteristic
FE
3
4
linearity
(I
C
= −0.1mA) / (I
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Type Name
(Ta = 25°C) (Q1, Q2 Common)
h FE Rank
: V
: h
C
(Ta = 25°C) (Q1, Q2 Common)
FE
= −2mA)= 0.95 (typ.)
CEO
h
V
Symbol
= 120~400
Symbol
FE (Note)
HN2A01FE
V
V
V
CE (sat)
I
I
T
P
CBO
C
EBO
= −50V, I
CBO
CEO
EBO
I
I
T
f
stg
C
C
B
T
ob
Equivalent Circuit
j
*
C
Circuit
Test
= −150mA (max)
―
―
―
―
―
―
−55~150
Rating
−150
−50
−50
−30
100
150
−5
1
V
V
V
I
V
V
C
CB
EB
CE
CE
CB
= −100mA, I
= −5V, I
= −50V, I
= −6V, I
= −10V, I
= −10V, I
Test Condition
Unit
mW
mA
mA
°C
°C
(Top View)
C
V
V
V
C
E
C
E
= 0
= −2mA
B
= 0
= −1mA
= 0, f = 1MH
= −10mA
JEDEC
JEITA
TOSHIBA
Weight: 3.0mg
1.EMITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
6.COLLECTOR1
z
Min
120
―
―
―
80
―
−0.1
Typ.
―
―
―
―
4
2-2N1A
(E1)
(E2)
(B2)
(C2)
(B1)
(C1)
HN2A01FE
―
―
2004-06-28
Max
−0.1
−0.1
−0.3
400
―
―
Unit: mm
MH
Unit
µA
µA
pF
―
V
z
Related parts for HN2A01FE
HN2A01FE Summary of contents
Page 1
... V ― (sat −10V −1mA f V ― −10V 1MH ― Equivalent Circuit (Top View) 1 HN2A01FE Unit: mm 1.EMITTER1 (E1) 2.EMITTER2 (E2) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.BASE1 (B1) 6.COLLECTOR1 (C1) JEDEC ― JEITA ― TOSHIBA 2-2N1A Weight: 3.0mg Min Typ. Max Unit −0.1 ― ...
Page 2
... Q2 Common – 200 150 100 100 AMBIENT TEMPERATURE Ta (°C) *:Total Rating 2 HN2A01FE 125 150 175 2004-06-28 ...
Page 3
... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 3 HN2A01FE 030619EAA 2004-06-28 ...