HN2C26FS TOSHIBA Semiconductor CORPORATION, HN2C26FS Datasheet - Page 2

• Manufacturer Part Number: HN2C26FS
• Description: Toshiba Transistor Silicon Npn Epitaxial Type Pct Process
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1, Q2 Common
1000
100
120
100
0.01
0.1
80
60
40
20
10
0.1
1
0
1
0
0
0.1
2.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
0.2
Ta = 100°C
1
COLLECTOR CURRENT IC (mA)
BASE-EMITTER VOLTAGE VBE (V)
1.5
25
COMMON EMITTER Ta = 25°C
0.4
2
VCE(sat) - IC
1
25
IC - VCE
IB - VBE
0.6
1.0
3
COMMON EMITTER
IC/IB = 10
COMMON EMITTER
VCE = 6V
0.8
4
IB = 0.1 mA
Ta = 100°C
-25
-25
0.7
10
5
1
0.2
0.5
0.3
1.2
6
100
1.4
7
2
1000
100
0.1
10
10
100
1
90
80
70
60
50
40
30
20
10
0.1
0.1
0
*:Total rating
0
Ta = 100°C
COLLECTOR CURRENT IC (mA)
COMMON EMITTER
20
VCE = 6 V
VCE = 1 V
AMBIENT TEMPERATURE Ta (°C)
COLLECTOR CURRENT IC (mA)
Mounted on FR4 board
(10 mm × 10 mm × 1 mmt)
25
40
1
1
VBE(sat) - IC
hFE - IC
25
60
PC - Ta
-25
Ta = 100°C
-25
80
COMMON EMITTER
IC/ IB = 10
100 120 140 160
10
10
HN2C26FS
2005-03-23
100
100