HN2S04FU TOSHIBA Semiconductor CORPORATION, HN2S04FU Datasheet
HN2S04FU
Manufacturer Part Number
HN2S04FU
Description
Toshiba Diode Epitaxial Schottky Barrier Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.HN2S04FU.pdf
(4 pages)
High-Speed Switching Application
Absolute Maximum Ratings
Electrical Characteristics
*: Per one diode.
**: Total rating
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Forward voltage
Reverse current
Total capacitance
The HN2S04FU consists of three separate diodes.
Low forward voltage: V
Low reverse current: I
Small total capacitance: C
When more than one diode is used, the surge current rating is reduced to 75% of I
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristic
Characteristic
R
F (3)
= 50 μA (max)
T
= 0.36V (typ.)
TOSHIBA Diode
= 46 pF (typ.)
(Q1, Q2, Q3 Common, Ta = 25°C)
(Ta = 25°C)
Symbol
Symbol
HN2S04FU
V
V
V
I
V
T
T
FSM
I
V
F (1)
F (2)
F (3)
C
I
FM
I
T
RM
P
opr
stg
R
O
R
T
j
I
I
I
V
V
F
F
F
R
R
= 1 mA
= 10 mA
= 200 mA
Epitaxial Schottky Barrier Type
−55 to 125
−40 to 100
= 20 V
= 0, f = 1MH
Rating
200 **
450 *
200 *
125
1 *
25
20
1
Test Condition
z
Unit
mW
mA
mA
°C
°C
°C
V
V
A
JEDEC
JEITA
TOSHIBA
Weight: 0.0062g(typ.)
FSM
.
Min
―
―
―
―
―
Typ.
0.16
0.22
0.36
―
46
1-2T1C
HN2S04FU
―
―
2008-02-02
Max
0.42
50
―
―
―
Unit: mm
Unit
μA
pF
V
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HN2S04FU Summary of contents
Page 1
... TOSHIBA Diode High-Speed Switching Application The HN2S04FU consists of three separate diodes. Low forward voltage 0.36V (typ.) F (3) Low reverse current μA (max) R Small total capacitance (typ.) T Absolute Maximum Ratings Characteristic Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current ...
Page 2
... Pin Assignment (Top View Marking B2 2 HN2S04FU 2008-02-02 ...
Page 3
... HN2S04FU 2008-02-02 ...
Page 4
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 HN2S04FU 20070701-EN 2008-02-02 ...