HN2A01FU TOSHIBA Semiconductor CORPORATION, HN2A01FU Datasheet
HN2A01FU
Manufacturer Part Number
HN2A01FU
Description
Pnp Epitaxial Type Audio Frequency General Purpose Amplifier Applications
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.HN2A01FU.pdf
(3 pages)
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HN2A01FU
Manufacturer:
toshiba
Quantity:
30 000
Part Number:
HN2A01FU-GR
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
HN2A01FU-Y
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
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Part Number:
HN2A01FU-Y(TE85L,F)
Manufacturer:
Toshiba
Quantity:
11 303
Audio Frequency General Purpose Amplifier Applications
l Small package (dual type)
l High voltage and high current : V
l High h
l Excellent h
Maximum Ratings
Electrical Characteristics
Marking
* Total rating
Note: h
= 0.95 (typ.)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Y(Y): 120~240, GR(G): 200~400
( ) marking symbol
FE
FE
Characteristic
Characteristic
classification
FE
linearity
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
(Ta = 25°C) (Q1, Q2 Common)
: h
: h
(Ta = 25°C) (Q1, Q2 Common)
FE
FE
CEO
h
V
Symbol
Symbol
FE (Note)
HN2A01FU
= 120~400
(I
V
V
V
CE (sat)
I
I
P
T
CBO
C
C
EBO
CBO
CEO
EBO
= −50V, I
I
I
T
f
C
stg
C
B
T
ob
Equivalent Circuit
j
= −0.1mA) / (I
*
Circuit
C
Test
―
―
―
―
―
―
= −150mA (max)
−55~125
Rating
−150
−50
−50
−30
200
125
−5
1
C
V
V
V
I
V
V
C
CB
EB
CE
CE
CB
= −2mA)
= −100mA, I
= −50V, I
= −5V, I
= −6V, I
= −10V, I
= −10V, I
Test Condition
Unit
mW
mA
mA
°C
(Top View)
°C
C
V
V
V
C
E
C
E
= 0
= −2mA
B
= 0
= 0, f = 1MH
= −1mA
= −10mA
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
z
Min
120
80
―
―
―
―
Typ.
−0.1
―
―
―
―
4
2-2J1B
HN2A01FU
―
―
2001-06-07
−0.1
−0.1
−0.3
Max
400
―
7
Unit: mm
MH
Unit
µA
µA
pF
―
V
z
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HN2A01FU Summary of contents
Page 1
... EB h ― −6V (Note ― −100mA (sat −10V, I ― ― −10V Equivalent Circuit 1 HN2A01FU °C JEDEC ― EIAJ ― °C TOSHIBA 2-2J1B Weight: 6.8mg Min Typ ― ― ― ― −2mA 120 ― − ...
Page 2
... Q2 Common) 2 HN2A01FU 2001-06-07 ...
Page 3
... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 3 HN2A01FU 000707EAA 2001-06-07 ...