HN2A26FS TOSHIBA Semiconductor CORPORATION, HN2A26FS Datasheet
HN2A26FS
Manufacturer Part Number
HN2A26FS
Description
Toshiba Transistor Silicon Pnp Epitaxial Type Pct Process
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.HN2A26FS.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HN2A26FS
Manufacturer:
toshiba
Quantity:
30 000
Frequency General-Purpose Amplifier Applications
•
•
•
•
•
•
Maximum Ratings
Electrical Characteristics
Marking
Note: Total rating.
Note: h
Two devices are incorporated into a fine-pitch, Small-Mold (6-pin)
package.
High voltage: V
High current: I
High h
Excellent h
Lead (Pb) - free
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
( ) Marking symbol
FE
: h
FE
PF
: h
FE
Classification
FE
Characteristic
FE
Characteristic
(I
C
linearity
C
= 120 to 400
CEO
= −100 mA (max)
= −0.1 mA)/h
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
= −50 V
Type Name
(Ta = 25°C)
h
FE
Rank
Y (F): 120 ~ 140, GR (H): 200 ~ 400
FE
(I
(Ta = 25°C)
C
= −2 mA) = 0.95 (typ.)
Equivalent Circuit
P
Symbol
HN2A26FS
C
V
V
V
h
T
(Note)
V
CBO
CEO
EBO
I
I
T
Symbol
FE
stg
C
B
CE (sat)
j
I
I
CBO
C
EBO
(Note)
f
T
ob
Q1
6
1
V
V
V
I
V
V
−55 ~ 150
C
CB
EB
CE
CE
CB
Rating
−100
= −100 mA, I
−50
−50
−30
150
5
2
−5
50
1
= −50 V, I
= −5 V, I
= −6 V, I
= −10 V, I
= −10 V, I
Q2
4
3
Test Condition
(top view)
C
C
E
C
E
= 0
= −2 mA
B
= 0
= 0, f = 1 MHz
= −1 mA
= −10 mA
Unit
mW
mW
mA
°C
°C
V
V
V
Weight: 0.001 g (typ.)
JEDEC
JEITA
TOSHIBA
fS6
0.1±0.05
Min
120
80
⎯
⎯
―
⎯
1. EMITTER1
2. EMITTER2
3. BASE2
4. COLLECTOR2
5. BASE1
6. COLLECTOR1
1
3
2
−0.18
Typ.
1.6
⎯
⎯
⎯
⎯
1.0±0.05
0.8±0.05
HN2A26FS
2-1F1C
2005-04-11
―
―
Max
−0.1
−0.1
−0.3
400
⎯
⎯
4
6
5
(E1)
(E2)
(B2)
(C2)
(B1)
(C1)
Unit: mm
0.1±0.05
MHz
Unit
µA
µA
pF
V
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HN2A26FS Summary of contents
Page 1
... − − MHz Equivalent Circuit (top view HN2A26FS Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 0.1±0. EMITTER1 (E1) 2. EMITTER2 (E2) 3. BASE2 (B2) 4. COLLECTOR2 (C2) fS6 5. BASE1 (B1) 6. COLLECTOR1 (C1) JEDEC ― ...
Page 2
... AMBIENT TEMPERATURE Ta (°C) *:Total rating. 2 HN2A26FS hFE - 100°C 25 -25 -1 -10 -100 COLLECTOR CURRENT IC (mA) VBE(sat - 100°C -1 -10 -100 COLLECTOR CURRENT IC (mA Mounted on FR4 board (10 mm × × 1 mmt) ...
Page 3
... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 3 HN2A26FS 030619EAA 2005-04-11 ...