HN2S01F TOSHIBA Semiconductor CORPORATION, HN2S01F Datasheet
HN2S01F
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HN2S01F Summary of contents
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... TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application l HN2S01F is composed of 3 independent diodes. l Low reverse current 0.23V (typ (Ta = 25° ° ° ° C) Maximum Ratings Characteristic Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current ...
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... Pin Assignment (Top View) Marking 2 HN2S01F 2001-06-05 ...
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... HN2S01F 2001-06-05 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 4 HN2S01F 000707EAA 2001-06-05 ...