CEF04N7 Chino-Excel Technology Co., Ltd., CEF04N7 Datasheet - Page 2

• Manufacturer Part Number: CEF04N7
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Chino-Excel Technology Co., Ltd.

Electrical Characteristics
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e .Pulse width limited by safe operating area .
f.Full package I
S(max)
= 2.5A .
Parameter
b
c
c
b
T c = 25 C unless otherwise noted
Symbol
R
V
BV
t
t
V
C
C
I
C
Q
I
GS(th)
DS(on)
d(on)
d(off)
Q
g
I
I
GSSF
Q
GSSR
S
DSS
t
t
SD
oss
FS
iss
rss
r
gd
f
gs
DSS
g
f
CEP04N7/CEB04N7
4 - 19
CEI04N7/CEF04N7
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
Test Condition
= 0V, I
= 600V, V
= 30V, V
= -30V, V
= V
= 10V, I
= 40V, I
= 25V, V
= 300V, I
= 10V, R
= 480V, I
= 10V
= 0V, I
DS
, I
D
S
D
D
D
= 250 µ A
= 2.5A
GS
GEN
D
D
DS
DS
= 2A
= 250 µ A
= 2A
GS
= 4A,
= 4A,
= 0V,
= 0V
= 0V
= 0V
= 25
Min
700
2
Typ
505
2.7
1.3
5.7
95
55
21
34
88
28
37
20
-100
Max
160
3.5
2.5
1.6
100
25
40
65
60
48
4
Units
µ A
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
V
4