SUF-1033 RF Micro Devices, SUF-1033 Datasheet - Page 2

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SUF-1033

Manufacturer Part Number
SUF-1033
Description
Dc To 20ghz, Cascadable Phemt Mmic Amplifier
Manufacturer
RF Micro Devices
Datasheet

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SUF-1033
Typical Performance (Circuit Board Data with Bias Tees) V
2 of 6
Output 3rd Order Intercept Point (see
Absolute Maximum Ratings
Total Current (l
Device Voltage (V
Power Dissipation
RF Input Power
Storage Temperature Range
Operating Temperature Range (T
Operating Junction Temperature (T
Operation of this device beyond any one of these limits may cause permanent dam-
Bias Conditions should also satisfy the following expression:
Device Operating Current
Noise Figure
Thermal Resistance
Note 1: 0 dBm/tone, 1 MHz tone spacing
Output Power at 1 dB Compression
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
I
D
V
D
< (T
Output Return Loss
Small Signal Gain
Input Return Loss
Reverse Isolation
Parameter
Parameter
J
Parameter
Noise Figure
- T
note 1)
L
D
) / R
)
D
)
TH
, j-l and T
L
= Backside of die
L
)
J
)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Units
dBm
dBm
Min.
dB
dB
dB
dB
dB
-65 to +150
-45 to +85
Rating
0.378
+150
500 MHz
+20
4.2
Specification
90
10.5
27.4
14.3
26.1
18.8
17.6
5.4
Typ.
146
4.6
4.8
5.8
47
3 GHz
10.2
26.1
13.8
15.8
13.6
17.9
4.6
S
= 5 V, R
Max.
Unit
dBm
mA
°C
°C
°C
W
V
BIAS
9 GHz
24.3
13.7
13.8
13.7
19.0
9.5
4.8
= 33 Ω, T = 25°C, Z = 50 Ω
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EU Directive 2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
°C/W
Unit
mA
dB
dB
dB
12 GHz 15 GHz 18 GHz
21.2
11.2
20.2
8.0
7.4
6.1
4.7
Caution! ESD sensitive device.
Freq = 3 GHz
Freq = 9 GHz
Freq = 18 GHz
Junction to backside
21.6
12.1
25.3
19.1
8.6
9.5
4.8
Condition
22.9
13.2
27.1
19.5
7.4
7.6
5.8
Rev A0 DS090528

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