FGA40N60UFD Fairchild Semiconductor, FGA40N60UFD Datasheet - Page 3

• Manufacturer Part Number: FGA40N60UFD
• Description: Fga40n60ufd Ultrafast Igbt
• Manufacturer: Fairchild Semiconductor

©2003 Fairchild Semiconductor Corporation
Fig 5. Saturation Voltage vs. V
Fig 1. Typical Output Characteristics
160
120
4
3
2
1
0
20
16
12
80
40
8
4
0
0
0
0
Common Emitter
Vge=15V
Fig. 1 Fig3.Saturation Voltage vs. Case
0
Temperature at Variant Current Level
Common Emitter
Tc = 25 ℃
30
4
Gate - Emitter Voltage, V
Collector-Emitter Voltage,V
Case Temperature, T
I
C
2
= 10A
60
8
20A
4
40A
90
12
C
GE
[ ℃ ]
Common Emitter
T
GE
C
CE
= 25 ℃
[V]
20V
6
120
(V)
16
V
GE
Ic=10A
40A
= 10V
20A
15V
12V
150
20
8
80
70
60
50
40
30
20
10
Fig 2. Typical Saturation Voltage
Fig 4. Load Current vs. Frequency
Fig 6. Saturation Voltage vs. V
30
25
20
15
10
0
20
16
12
5
0
0.5
8
4
0
0.1
Common Emitter
V
Tc= 25 ℃
Tc= 125 ℃
0
GE
Duty cycle : 50%
Tc = 100 ℃
Powe Dissipation = 32W
=15V
Collector-Emitter Voltage, V
4
1
Gate - Emitter Voltage, V
Ic=10A
1
Vcc = 300V
Load Current : peak of square wave
Frequency [kHz]
8
20A
10
40A
12
Common Emitter
T
GE
GE
100
C
CE
= 125 ℃
[V]
(V)
16
FGA40N60UFD Rev. A
1000
10
20