FGA40N60UFD Fairchild Semiconductor, FGA40N60UFD Datasheet - Page 5

• Manufacturer Part Number: FGA40N60UFD
• Description: Fga40n60ufd Ultrafast Igbt
• Manufacturer: Fairchild Semiconductor

©2003 Fairchild Semiconductor Corporation
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
1000
3000
500
100
0.1
100
10
10
1
0.3
I
I
Eoff
Eon
Eoff
C
C
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
MAX. (Pulsed)
MAX. (Continuous)
10
C
= 25℃
Collector-Emitter Voltage, V
15
1
Collector Current , Ic (A)
1E-3
0.01
0.1
1
20
10
DC Operation
-5
0.02
0.05
0.01
0.1
0.2
0.5
single pulse
10
25
Common Emitter
V
R
T
T
CC
C
C
G
= 25 ℃
= 125 ℃
= 10
= 300V, V
10
30
1㎳
-4
Fig 17. Transient Thermal Impedance of IGBT
CE
100
100us
[V]
GE
35
= ± 15V
50us
10
40
1000
Rectangular Pulse Duration [sec]
-3
10
-2
Fig 16. Turn-Off SOA Characteristics
Fig 14. Gate Charge Characteristics
500
100
15
12
0.1
10
9
6
3
0
1
0
1
Common Emitter
R
(Tc=25 ℃ )
L
=15 Ω
10
-1
Collector-Emitter Voltage, V
30
Gate Charge, Qg (nC)
Pdm
10
Duty factor D = t1 / t2
Peak Tj = Pdm
Safe Operating Area
V
GE
10
=20V, T
Vcc=100V
t1
0
60
t2
200V
C
=100
300V
Zthjc + T
o
100
C
C
10
CE
1
90
[V]
FGA40N60UFD Rev. A
1000
120