FGA180N30D Fairchild Semiconductor, FGA180N30D Datasheet - Page 2

• Manufacturer Part Number: FGA180N30D
• Description: Fga180n30d 300v Pdp Igbt
• Manufacturer: Fairchild Semiconductor

FGA180N30D Rev. B
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
Off Characteristics
BV
∆BV
∆T
I
I
On Characteristics
V
V
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Q
Q
Q
Device Marking
Symbol
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
GE(th)
CE(sat)
on
off
ts
on
off
ts
ies
oes
res
g
ge
gc
J
CES
FGA180N30D
CES
/
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
FGA180N30D
Parameter
Device
Package
TO-3P
V
V
V
V
f = 1MHz
R
Resistive Load, T
R
Resistive Load, T
V
V
V
V
V
I
I
I
T
I
T
C
C
C
C
GE
GE
CE
GE
CE
CC
CC
CE
GE
G
G
C
C
= 40A
= 180A
= 180A
= 250uA, V
= 5Ω, V
= 5Ω, V
= 25°C
= 125°C
= 30V
= V
= 200V, I
T
= 0V, I
= 0V, I
= V
= 200V, I
= 200V, I
= 15V
C
Test Conditions
= 25°C unless otherwise noted
CES
GES
2
,
V
,
,
,
C
C
V
GE
V
V
, V
GE
GE
, V
GE
= 250µA
= 250µA
GE
GE
C
C
C
CE
GE
CE
= 15V
= 15V,
= 15V,
Reel Size
= 0V,
= 40A,
= 40A,
= 40A,
= 15V,
= 15V,
= V
C
= 0V
= 0V
C
= 125°C
= 25°C
--
GE
Tape Width
Min.
300
2.5
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Typ.
3420
0.26
0.75
1.01
0.27
1.27
520
150
210
100
140
230
220
185
110
0.6
4.0
1.1
1.9
2.0
1.0
30
30
24
88
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Max.
± 250
100
300
277
132
5.0
1.4
36
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Quantity
www.fairchildsemi.com
30
Units
V/°C
mJ
mJ
µA
nA
mJ
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V