FGA180N30D Fairchild Semiconductor, FGA180N30D Datasheet - Page 7

• Manufacturer Part Number: FGA180N30D
• Description: Fga180n30d 300v Pdp Igbt
• Manufacturer: Fairchild Semiconductor

FGA180N30D Rev. B
Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 21. Typical Reverse Recovery Time
100
0.1
10
36
32
28
24
1
0.0
100
0.5
1E-3
T
0.01
0.1
J
= 125
1
Forw ard Voltage , V
1E-5
o
C
1.0
0.05
0.02
0.01
0.2
di/dt [A/
0.1
0.5
T
J
Figure 18. Transient Thermal Impedance of IGBT
= 25
µ
single pulse
1.5
1E-4
o
s]
C
F
[V]
T
T
C
C
= 25
= 125
2.0
I
Tc = 25
F
o
C
o
= 10A
C
1E-3
Rectangular Pulse Duration [sec]
o
C
2.5
500
(Continued)
0.01
7
5
4
3
2
1
0
100
0.1
Figure 20. Typical Reverse Recovery
Pdm
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T
1
di/dt [A/
t1
t2
µ
s]
Current
C
10
I
T
F
C
= 10A
= 25
o
C
500
www.fairchildsemi.com