NGB8207N ON Semiconductor, NGB8207N Datasheet - Page 5

• Manufacturer Part Number: NGB8207N
• Description: Ignition Igbt 20 A, 365 V, Nchannel D2pak
• Manufacturer: ON Semiconductor

10,000
100,000
1000
10,000
100
60
50
40
30
20
10
1000
10
0
100
1
10
0
0
1
−50
V
20
1
Figure 9. Collector−to−Emitter Leakage
CE
−25
Figure 7. On−Region Characteristics
COLLECTOR−TO−EMITTER VOLTAGE (V)
, COLLECTOR−TO−EMITTER VOLTAGE (V)
6.5 V
Figure 11. Capacitance Variation
40
6.0 V
2
T
J
0
Current vs. Temperature
, JUNCTION TEMPERATURE (°C)
60
10 V
3
25
@ T
80
4
J
V
50
C
C
C
100
CE
= 1755C
5
iss
oss
rss
= −24 V
TYPICAL ELECTRICAL CHARACTERISTICS
120
75
6
V
140
100
7
CE
5.5 V
V
= 320 V
T
V
160 180
GE
125
8
J
GE
= 25°C
= 2.0 V
= 0 V
http://onsemi.com
5.0 V
9
150
NGB8207N
10
200
175
5
1.75
1.25
0.75
100
2.0
1.5
1.0
0.5
0.1
60
50
40
30
20
10
10
0
1
−50
1.0
25
Figure 12. Resistive Switching Time Variation
V
MEAN − 4s
V
V
R
I
C
CE
−25
MEAN + 4s
CC
GE
G
= 10 A
Figure 10. Gate Threshold Voltage vs.
= 1000 W
≥ 5.0 V
= 300 V
= 5.0 V
V
50
Figure 8. Transfer Characteristics
GE
2.0
T
J
, GATE−TO−EMITTER VOLTAGE (V)
0
, JUNCTION TEMPERATURE (°C)
25
75
TEMPERATURE (°C)
vs. Temperature
T
Temperature
J
3.0
= 25°C
50
T
100
J
MEAN
= −40°C
75
t
t
d(off)
d(on)
t
4.0
t
r
f
100
125
125 150
T
5.0
J
150
= 175°C
175
6.0
175