NGB8207N ON Semiconductor, NGB8207N Datasheet - Page 6

• Manufacturer Part Number: NGB8207N
• Description: Ignition Igbt 20 A, 365 V, Nchannel D2pak
• Manufacturer: ON Semiconductor

1000
100
10
0.01
1
0.000001
0.1
25
1
V
V
R
Figure 13. Inductive Switching Time Variation
CC
GE
G
0.01
0.05
0.02
0.1
Duty Cycle = 0.5
0.2
= 1000 W
= 300 V
= 5.0 V
50
Single Pulse
I
L = 300 mH
C
75
TEMPERATURE (°C)
= 10 A
0.00001
vs. Temperature
(Non−normalized Junction−to−Case Mounted on Cold Plate)
100
Figure 15. Best Case Transient Thermal Resistance
t
t
d(off)
d(on)
TYPICAL ELECTRICAL CHARACTERISTICS
t
t
r
f
125
0.0001
150
http://onsemi.com
NGB8207N
175
t,TIME (S)
6
0.001
P
DUTY CYCLE, D = t
100
(pk)
0.1
10
1
1
V
Single Pulse
T
Mounted on 2″ sq. FR4 board (1″ sq.
C
GE
Figure 14. Forward Biased Safe Operating
2 oz. Cu 0.06″ thick single sided)
t
= 25°C
1
= 4.0 V
V
t
2
CE
, COLLECTOR−EMITTER VOLTAGE (V)
0.01
1
V
THERMAL LIMIT
PACKAGE LIMIT
/t
CE(on)
2
10
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
LIMIT
J(pk)
Area
− T
A
= P
0.1
(pk)
100
1
R
qJC
(t)
10 ms
10 ms
100 ms
1 ms
dc
1000
1