SGM2306A SeCoS Halbleitertechnologie GmbH, SGM2306A Datasheet
SGM2306A
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SGM2306A Summary of contents
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... Elektronische Bauelemente Description The SGM2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SGM2306A is universally used for all commercial- industrial surface mount applications. Features * Lower On-Resistance * Capable Of 2.5V Gate drive Absolute Maximum Ratings Parameter ...
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... Ciss 660 _ Coss 90 _ Crss 70 _ Gfs 13 Symbol Min. Typ ≦ ≦ SGM2306A 5A, 30V,R 35m DS(ON) Ω Max. Unit Test Condition =0V, I =250uA Reference 1 =250uA DS GS, D 100 ...
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... Elektronische Bauelemente Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A SGM2306A 5A, 30V,R DS(ON) N-Channel Enhancement Mode Power Mos.FET Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. ...
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... Elektronische Bauelemente Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A SGM2306A 5A, 30V,R DS(ON) N-Channel Enhancement Mode Power Mos.FET Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual 35m Ω ...