SGM2306A SeCoS Halbleitertechnologie GmbH, SGM2306A Datasheet - Page 2

• Manufacturer Part Number: SGM2306A
• Description: N-channel Enhancement Mode Power Mos.fet
• Manufacturer: SeCoS Halbleitertechnologie GmbH

http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Notes: 1.
Source-Drain Diode
Reverse Recovery Time
Reverse Recovery Change
Forward On Voltage
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Rise Time
Turn-off Delay Time
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Fall Time
Input Capacitance
Reverse Transfer Capacitance
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Drain-Source Leakage Current(Tj=150 )
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Output Capacitance
Forward Transconductance
2. Pulse width 300us, dutycycle 2%.
3.Surface mounted on FR4 board, t 10sec.
Pulse width limited by Max. junction temperature.
Elektronische Bauelemente
Parameter
Parameter
2
≦
2
2
2
o
≦
o
C
C
≦
Symbol
BV
o
Symbol
R
Td
BV
Td
V
V
Crss
T
Ciss
Coss
Q
D S (O N )
Gfs
DS
I
Qg
Qgs
Qgd
I
GS(th)
T f
SD
rr
GSS
Tr
DSS
(ON)
rr
(Off)
DSS
/ Tj
Min.
Min.
0.5
_
_
_
_
_
30
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
N-Channel Enhancement Mode Power Mos.FET
Typ.
Typ.
660
0.1
1.5
70
13
14
_
8.5
3.2
90
20
20
_
_
_
_
_
6
3
7
_
_
_
_
Max.
±
Max.
5A, 30V,R
100
1050
1.2
1.2
50
_
1
25
35
90
15
_
_
_
_
_
_
30
_
_
_
_
_
SGM2306A
Any changing of specification will not be informed individual
Unit
V/
nA
uA
m
uA
Unit
nS
nC
V
V
V
nC
pF
S
nS
Ω
o
C
DS(ON)
I
I
S
dl/dt=100A/us
S
Test Condition
Reference to 25 C , I
V
=1.2A, V
V
V
V
V
V
V
V
R
V
V
I
R
=5A, V
V
V
I
V
V
V
V
Test Condition
D
D
f=1.0MHz
DS
GS
DS
DS
GS
GS
DD
GS
GS
DS
G
GS
GS
GS
=5A
D
DS
35m
=5A
GS
DS
=3.3
=3
=V
=30V,V
=24V,V
= 20V
=10V, I
=4.5V, I
=15V
=10V
=0V, I
=16 V
=2.5V, I
=1.8V, I
= 4.5V
=5V, I
=0V
=25V
±
Ω
GS,
Ω
Ω
GS
I
D
GS
D
D
=250uA
=0V.
=250uA
GS
GS
D
=5A
D
D
D
=5A
=0V.
=5 A
=2.6A
=1 A
=0
=0
o
D
= 1m
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