SIB419DK Vishay, SIB419DK Datasheet

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SIB419DK

Manufacturer Part Number
SIB419DK
Description
P-channel 12-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIB419DK-T1-GE3
Manufacturer:
VISHAY
Quantity:
12 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. See Solder Profile (
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under Steady State conditions is 105 °C/W.
f. Based on T
Document Number: 70440
S-80515-Rev. C, 10-Mar-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
- 12
(V)
1.60 mm
6
PowerPAK SC-75-6L-Single
D
C
5
= 25 °C.
0.060 at V
0.082 at V
0.114 at V
D
4
S
h
R
ttp://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
DS(on)
D
1
S
GS
GS
GS
D
1.60 mm
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
J
2
= 150 °C)
a, e
G
3
P-Channel 12-V (D-S) MOSFET
Ordering Information: SiB419DK-T1-GE3 (Lead (Pb)-free and Halogen-free)
I
D
- 8.7
- 9
- 9
(A)
a
a
c, d
f
Part # code
A
= 25 °C, unless otherwise noted
Q
7.15 nC
Steady State
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
New Product
t ≤ 5 s
Marking Code
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
B F X
X X X
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• New Thermally Enhanced PowerPAK
• Load Switch, PA Switch and Battery Switch for Portable
Lot Traceability
and Date code
Symbol
Symbol
T
R
R
SC-75 Package
- Small Footprint Area
Devices
J
V
V
I
P
, T
DM
I
I
thJC
thJA
GS
DS
D
S
D
stg
®
Power MOSFET
Typical
7.5
41
- 55 to 150
- 5.2
- 4.2
- 2.0
2.45
1.6
- 10.9
Limit
13.1
- 12
- 15
260
± 8
8.4
- 9
- 9
a, b
a, b
a, b
a, b
a, b
Maximum
9.5
51
Vishay Siliconix
G
P-Channel MOSFET
SiB419DK
®
www.vishay.com
S
D
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SIB419DK Summary of contents

Page 1

... Small Footprint Area - 8.7 APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices Marking Code Part # code Lot Traceability and Date code Ordering Information: SiB419DK-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° ...

Page 2

... SiB419DK Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... V GS 1 0.0 1.8 2.4 3.0 1000 800 600 400 = 2.5 V 200 1.5 1 0.9 0.6 0 SiB419DK Vishay Siliconix ° 125 ° °C J 0.0 0.4 0.8 1.2 1.6 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...

Page 4

... SiB419DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 °C J 0.1 0. °C J 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Soure-Drain Diode Forward Voltage 1.0 0 250 µA D 0.8 0.7 0.6 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.18 0.15 0.12 0.09 0.06 0.03 0.00 0.8 1.0 1.2 75 100 125 150 100 I Limited R Limited by ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 70440 S-80515-Rev. C, 10-Mar-08 New Product 16 12 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiB419DK Vishay Siliconix 100 125 T - Case Temperature (° ...

Page 6

... SiB419DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.05 0.1 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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