SIB419DK Vishay, SIB419DK Datasheet - Page 4

• Manufacturer Part Number: SIB419DK
• Description: P-channel 12-v D-s Mosfet
• Manufacturer: Vishay

SiB419DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
0.01
0.1
1.0
0.9
0.8
0.7
0.6
0.5
10
1
0.0
- 50
Soure-Drain Diode Forward Voltage
- 25
0.2
T
J
V
= 150 °C
SD
0
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
J
25
- Temperature (°C)
I
D
0.6
T
= 250 µA
50
J
= 25 °C
75
0.8
0.001
0.01
100
0.1
10
100
1
0.1
1.0
* V
Limited by
Safe Operating Area, Junction-to-Ambient
125
GS
1.2
V
minimum V
150
New Product
DS
R
Single Pulse
DS(on)*
T
- Drain-to-Source Voltage (V)
A
BV
1
= 25 C
DSS
GS
Limited
at which R
I
DM
DS(on)
10
Limited
0.18
0.15
0.12
0.09
0.06
0.03
0.00
10 ms
100 ms
1 s
10 s
DC
20
15
10
5
0
0.001
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.01
100
1
V
GS
- Gate-to-Source Voltage (V)
0.1
T
A
2
= 25 °C
Pulse (s)
1
S-80515-Rev. C, 10-Mar-08
Document Number: 70440
3
10
I
T
D
A
= 5.2 A
= 125 °C
4
100
1000
5