SIB417EDK Vishay, SIB417EDK Datasheet - Page 3

• Manufacturer Part Number: SIB417EDK
• Description: P-channel 1.2-v G-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68699
S-81192-Rev. A, 26-May-08
0.4
0.3
0.2
0.1
0.0
15
12
On-Resistance vs. Drain Current and Gate Voltage
9
6
3
0
5
4
3
2
1
0
0
0
0
V
GS
I
D
= 1.2 V
= 5.8 A
1
3
V
DS
Output Characteristics
2
Q
V
- Drain-to-Source Voltage (V)
GS
g
V
V
GS
- Total Gate Charge (nC)
I
GS
D
= 4.5 V
Gate Charge
V
- Drain Current (A)
= 5 thru 2.5 V
2
= 1.5 V
6
DS
= 4 V
4
3
9
V
V
V
DS
V
GS
GS
V
V
GS
6
GS
= 6.4 V
GS
= 1.8 V
= 1.5 V
12
4
= 2.5 V
= 1 V
= 2 V
New Product
15
5
8
1000
800
600
400
200
1.4
1.2
1.0
0.8
0.6
2.0
1.6
1.2
0.8
0.4
0.0
- 50
0
0.0
0
On-Resistance vs. Junction Temperature
- 25
T
V
C
V
T
0.5
GS
T
Transfer Characteristics
DS
0
= 125 °C
C
2
J
= 25 °C
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
V
C
GS
C
25
C
iss
Capacitance
rss
oss
= - 4.5 V, I
1.0
50
4
Vishay Siliconix
V
SiB417EDK
GS
T
D
75
C
= - 5.8 A
= - 2.5 V, I
= - 55 °C
www.vishay.com
100
1.5
6
D
125
= - 5 A
150
2.0
8
3