SIB417EDK Vishay, SIB417EDK Datasheet - Page 4

• Manufacturer Part Number: SIB417EDK
• Description: P-channel 1.2-v G-s Mosfet
• Manufacturer: Vishay

SiB417EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
5000
4000
3000
2000
1000
100
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
- 50
1
0
0.0
0
Gate Source Voltage vs. Gate Current
- 25
Soure-Drain Diode Forward Voltage
1
0.2
V
V
SD
0
GS
2
- Source-to-Drain Voltage (V)
Threshold Voltage
- Gate-to-Source Voltage (V)
T
J
T
25
J
- Temperature (°C)
3
0.4
= 150 °C
I
D
= 250 µA
50
4
0.6
I
75
GSS
5
at 25 °C
100
6
0.8
T
J
= 25 °C
125
7
150
New Product
1.0
8
10 000
0.001
1000
0.20
0.16
0.12
0.08
0.04
0.00
0.01
100
0.1
10
20
15
10
1
5
0
0.001
0.1
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Gate Source Voltage vs. Gate Current
0.01
1
V
V
GS
GS
I
GSS
- Gate-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
at 150 °C
0.1
I
GSS
2
Time (s)
at 25 °C
1
S-81192-Rev. A, 26-May-08
Document Number: 68699
3
1
I
T
D
T
J
= 5.8 A
J
10
= 25 °C
4
= 125 °C
100
10
5