EM566168 Etron Technology Inc., EM566168 Datasheet - Page 4

• Manufacturer Part Number: EM566168
• Description: 1m X 16 Pseudo Sram
• Manufacturer: Etron Technology Inc.

Et ronTech
DC Characteristics
Capacitance (Ta = 25°C; f = 1 MHz)
Notes: These parameters are sampled and not 100% tested.
Preliminary
Parameter
Input capacitance
Output capacitance
Symbol
I SBD
I CC1
I CC2
I SB1
V OH
V OL
I LO
I LI
Input Leakage Current
Output Leakage Current
Operating Current @ Min
Cycle Time
Operating Current @ Max
Cycle Time (1µs)
Standby Current (CMOS)
Deep Power Down
Output Low Voltage
Output High Voltage
Parameter
Symbol
C OUT
C IN
Min
−
−
V SS ~ V CC
I OL = 2.1mA
I OH = -1.0mA
V IN = V SS to V DD
V IO = V SS to V DD
CE1# = V IH , CE2 = V IL or
OE# = V IH or WE# = V IL
Cycle time = Min., 100% duty
I IO = 0mA, CE1# = V IL ,
CE2 = V IH , V IN = V IH or V IL
Cycle time = 1µs, 100% duty
I IO = 0mA, CE1# ≤ 0.2V,
CE2 ≥ V DD -0.2V, V IN ≤ 0.2V
CE1# = V DD – 0.2V and
CE2 = V DD – 0.2V,
Other inputs = V SS ~ V CC
CE2 ≤ 0.2V, Other inputs =
or V IN ≥ V DD -0.2V
Typ
−
−
Test Conditions
Max
10
8
4
Unit
pF
pF
Test Conditions
V OUT = GND
V IN = GND
Min.
2.4
Rev 0.2
-1
-1
−
−
−
−
Max.
100
0.4
EM566168
25
10
1
1
3
−
Feb. 2002
Unit
mA
mA
µA
µA
µA
µA
V
V