BSD314SPE Infineon Technologies Corporation, BSD314SPE Datasheet
BSD314SPE
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BSD314SPE Summary of contents
Page 1
... =-1 =-16V /dt di /dt =-200A/µs, T =150 °C j,max =25 °C tot stg JESD22-A114 -HBM page 1 BSD314SPE =-10 V 140 mΩ =-4.5 V 230 GS -1.5 A PG-SOT-363 Lead Free Packing Yes Non dry Value Unit -1 ...
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... V =-30V, V =0V =150 ° =-20V, V =0V GSS =-4.5V DS(on) I =-1. =-10V, I =-1. |>2 DS(on)max =-1 page 2 BSD314SPE Values Unit min. typ. max 250 K/W - -1.5 -2 µ -100 - - -5 µA - 153 230 mΩ - 107 140 , 2009-04-01 ...
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... I =-1 - plateau =25 ° S,pulse =-1.5A =25 ° =- =-1.5A /dt =100 A/µ page 3 BSD314SPE Values Unit min. typ. max. - 221 294 pF - 126 168 - ...
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... Max. transient thermal impedance Z =f(t thJA p parameter µs 100 µs 10 µ [V] DS page 4 BSD314SPE ≤- 100 120 140 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - ...
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... 2 [ Typ. forward transconductance g =f 150 °C 25 ° [V] GS page 5 BSD314SPE ); T =25 ° 3 [A] D =25 ° [A] ...
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... Forward characteristics of reverse diode =25° parameter Ciss Coss Crss - [V] DS page 6 BSD314SPE ); =-6.3 µ typ 100 140 T [° °C 150 °C, 98% 150 °C 25 °C, 98% 0.4 0.8 1.2 1.6 ...
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... °C 6 100 °C 4 125 ° [µs] 16 Gate charge waveforms s(th) Q g(th) 60 100 140 [°C] j page 7 BSD314SPE ); I =-1.5 A pulsed [nC] gate ate 2009-04-01 ...
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... Package Outline: Footprint: Reflow soldering: Rev 2.0 SOT-363 Packing: page 8 BSD314SPE 2009-04-01 ...
Page 9
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 2.0 page 9 BSD314SPE 2009-04-01 ...