BSD314SPE Infineon Technologies Corporation, BSD314SPE Datasheet - Page 2

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BSD314SPE

Manufacturer Part Number
BSD314SPE
Description
Small Signal Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet

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Rev 2.0
1)
of the PCB.
Parameter
Thermal characteristics
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
Performed on 40mm
2
FR4 PCB. The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJA
DS(on)
minimal footprint
V
V
V
T
V
T
V
V
I
V
|V
I
D
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=-1.2A
=-1.2 A
DS
=0V, I
=-30V, V
=-30V, V
= 0V, I
=-20V, V
=-4.5V,
=-10V, I
|>2|I
D
D
|R
D
=-6.3µA
=-250µA
D
DS(on)max
GS
GS
DS
=-1.5A
=0 V,
=0V,
=0V
1)
,
min.
-30
-1
-
-
-
-
-
-
Values
typ.
-1.5
153
107
3
-
-
-
-
-
BSD314SPE
max.
-100
250
230
140
-2
-1
-5
-
-
Unit
K/W
V
µA
µA
mΩ
S
2009-04-01

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