AO8701 Alpha & Omega Semiconductor, AO8701 Datasheet
AO8701
Available stocks
Related parts for AO8701
AO8701 Summary of contents
Page 1
... P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO8701 uses advanced trench technology to provide excellent R and low gate charge. A DS(ON) Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch. Standard Product AO8701 is Pb-free (meets ROHS & Sony 259 specifications ...
Page 2
... AO8701 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
Page 3
... AO8701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -10V -4.5V 20 -3V 15 -2. =- (Volts) DS Fig 1: On-Region Characteristics 120 100 V =-2. =-4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 190 170 150 I D 130 110 90 125° ...
Page 4
... AO8701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =-15V (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25° 100µs DS(ON) 10.0 limited 1ms 0.1s 10ms 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ...
Page 5
... AO8701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 10 125°C 1 0.1 0.01 25°C 0.001 0.0 0.2 0.4 0.6 0.8 V (Volts) F Figure 12: Schottky Forward Characteristics 0.7 0.6 I =3A F 0.5 0.4 I =1A F 0.3 0.2 0 100 Temperature (°C) Figure 14: Schottky Forward Drop vs. Junction Temperature 10 D θJA θJA J, =90°C/W θ ...