NTHD4N02F ON Semiconductor, NTHD4N02F Datasheet - Page 5

• Manufacturer Part Number: NTHD4N02F
• Description: Power Mosfet And Schottky Diode
• Manufacturer: ON Semiconductor

100E−3
100E−6
10E−3
10E−6
0.1
10
1E−3
3.5
2.5
1.5
0.5
1
0.00
3
2
1
0
25
V
F
0
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
T
J
Figure 13. Typical Reverse Current
= 150°C
Figure 11. Typical Forward Voltage
45
TYPICAL SCHOTTKY PERFORMANCE CURVES
0.20
V
Figure 15. Current Derating
T
R
square wave
L
65
, REVERSE VOLTAGE (VOLTS)
Ipk/Io = p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
T
T
T
, LEAD TEMPERATURE (°C)
J
J
J
= 150°C
= 100°C
= 25°C
dc
85
0.40
T
J
10
= −55°C
T
105
J
= 25°C
125
0.60
freq = 20 kHz
145
http://onsemi.com
NTHD4N02F
0.80
165
20
5
100E−3
100E−6
10E−3
10E−6
1E−3
0.1
10
1.4
1.2
0.8
0.6
0.4
0.2
1
0.00
1
0
0
0
Ipk/Io = 20
V
(T
Figure 14. Maximum Reverse Current
T
F
I
, MAXIMUM INSTANTANEOUS FORWARD
J
J
0.5
Figure 12. Maximum Forward Voltage
O
Figure 16. Forward Power Dissipation
Ipk/Io = 10
= 25°C unless otherwise noted)
= 150°C
, AVERAGE FORWARD CURRENT (AMPS)
V
0.20
R
Ipk/Io = 5
, REVERSE VOLTAGE (VOLTS)
T
T
T
J
J
J
1
= 150°C
= 100°C
= 25°C
VOLTAGE (VOLTS)
Ipk/Io = p
1.5
0.40
10
T
J
= 25°C
2
square wave
2.5
0.60
3
dc
0.80
3.5
20