BUK108-50DL NXP Semiconductors, BUK108-50DL Datasheet - Page 5

• Manufacturer Part Number: BUK108-50DL
• Description: Buk108-50dl Powermos Transistor Logic Level Topfet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
June 1996
PowerMOS transistor
Logic level TOPFET
100
0.1
I
10
D
1
% = 100 I
Fig.2. Normalised limiting power dissipation.
I
Fig.3. Normalised continuous drain current.
D
1
120
110
100
120
110
100
ID & IDM / A
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
& I
Fig.4. Safe operating area. T
0
0
0
0
DM
PD%
ID%
P
= f(V
D
D
% = 100 P
/I
20
20
D
Overload protection characteristics not shown
(25 ˚C) = f(T
DS
DC
); I
40
40
10
DM
D
single pulse; parameter t
60
60
/P
Tmb / C
Tmb / C
VDS / V
D
(25 ˚C) = f(T
mb
Normalised Current Derating
80
80
Normalised Power Derating
); conditions: V
100
100
100
tp =
100 ms
100 us
mb
10 ms
1 ms
120
120
= 25 ˚C
mb
)
BUK108-50DL
140
140
IS
= 5 V
p
5
Fig.6. Typical on-state characteristics, T
0.01
0.20
0.15
0.10
0.05
30
20
10
0.1
0
10
Fig.7. Typical on-state resistance, T
0
1
1E-07
0
ID / A
0
RDS(ON) / Ohm
Zth / (K/W)
R
Fig.5. Transient thermal impedance.
D =
0.05
0.02
ID = f(V
0.5
0.2
0.1
DS(ON)
0
VIS / V =
Z
th j-mb
= f(I
1E-05
DS
= f(t); parameter D = t
); parameter V
D
3.5
); parameter V
10
2
VDS / V
1E-03
t / s
ID / A
4
P
D
VIS / V =
4.5
IS
BUK108-50DL
Product specification
t
; t
IS
p
20
; t
T
p
1E-01
p
= 2 ms
5
= 2 ms
BUK108-50DL
p
D =
/T
j
BUK108-50DL
BUK108-50DL
= 25 ˚C.
4
5.5
j
t
T
p
t
5.5
4.5
3.5
= 25 ˚C.
6
5
4
3
Rev 1.000
6
1E+01
30