NDH853N Fairchild Semiconductor, NDH853N Datasheet
NDH853N
Manufacturer Part Number
NDH853N
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDH853N.pdf
(6 pages)
Absolute Maximum Ratings
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
© 1997 Fairchild Semiconductor Corporation
___________________________________________________________________________________________
D
J
DSS
GSS
D
NDH853N
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as battery powered
circuits or portable electronics where fast switching, low in-line
power loss, and resistance to transients are needed.
,T
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
- Pulsed
T
A
= 25°C unless otherwise noted
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1)
Features
7.6 A, 30 V. R
High density cell design for extremely low R
Proprietary SuperSOT
package with high power and current handling capability.
R
5
6
7
8
DS(ON)
DS(ON)
= 0.017
= 0.025
NDH853N
-55 to 150
TM
±20
7.6
1.8
0.9
30
23
70
20
-8 small outline surface mount
1
@ V
@ V
GS
GS
= 10 V
= 4.5 V.
DS(ON)
4
3
2
1
.
May 1997
NDH853N Rev. C
Units
°C/W
°C/W
°C
W
V
V
A
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NDH853N Summary of contents
Page 1
... May 1997 = 0.017 @ 0.025 @ DS(ON small outline surface mount NDH853N Units 30 V ± 0.9 -55 to 150 °C 70 °C/W 20 °C/W NDH853N Rev. C ...
Page 2
... D GS Min Typ Max 55°C J 100 -100 1 1 125°C 0.7 1 1.6 J 0.014 0.017 T = 125°C 0.02 0.031 J 0.021 0.025 23 18 1140 630 210 120 2.8 12.7 NDH853N Rev. C Units V µA µ ...
Page 3
... C/W when mounted on a 0.005 in pad of 2oz copper. 1a Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. = 25°C unless otherwise noted) A Conditions 1.5 A (Note Min Typ Max Units 1.5 A 0.72 1 guaranteed NDH853N Rev. C ...
Page 4
... I , DRAIN CURRENT (A) D Figure 4. On-Resistance Variation with Drain Current and Temperature 250µ JUNCTION TEMPERATURE (°C) J Figure 6. Gate Threshold Variation with Temperature NDH853N Rev. C ...
Page 5
... V , BODY DIODE FORWARD VOLTAGE (V) SD with Source Current and Temperature 10V = 7. GATE CHARGE (nC off t t d(off PULSE WIDTH 1.2 20V 15V INVERTED NDH853N Rev. C ...
Page 6
... C A Still Air 0.2 0.4 0.6 0.8 2 2oz COPPER MOUNTING PAD AREA ( 0 DRAIN-SOURCE VOLTAGE ( ( See Note 1c JA P(pk ( Duty Cycle NDH853N Rev ...