NDH853N Fairchild Semiconductor, NDH853N Datasheet - Page 3

• Manufacturer Part Number: NDH853N
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Notes:
ELECTRICAL CHARACTERISTICS
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
S
SD
design while R
Typical R
P
JA
D
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
t
a. 70
b. 125
c. 135
Scale 1 : 1 on letter size paper
JA
1a
R
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
T
J
o
Parameter
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
JA
CA
C/W when mounted on a 1 in
o
o
T
C/W when mounted on a 0.005 in
C/W when mounted on a 0.026 in
is determined by the user's board design.
A
t
R
JC
T
J
R
T
A
CA
t
I
2
D
2
t
pad of 2oz cpper.
R
2
2
pad of 2oz copper.
pad of 2oz copper.
DS ON @T
(T
A
= 25°C unless otherwise noted)
J
1b
Conditions
V
GS
= 0 V, I
S
= 1.5 A
(Note 2)
1c
Min
Typ
0.72
Max
JC
1.5
1.2
is guaranteed by
NDH853N Rev. C
Units
A
V