BS870 Diodes, Inc., BS870 Datasheet
BS870
Manufacturer Part Number
BS870
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Diodes, Inc.
Datasheet
1.BS870.pdf
(3 pages)
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Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Drain-Gate Voltage R
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Features
•
•
•
•
•
•
Notes:
BS870
Document number: DS11302 Rev. 14 - 2
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 4)
1. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
our website at http://www.diodes.com/datasheets/ap02001.pdf.
GS
Characteristic
≤ 1.0MΩ
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
TOP VIEW
Continuous
Continuous
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Symbol
R
BV
V
t
I
t
D(OFF)
DS (ON)
C
I
I
D(ON)
D(ON)
C
C
www.diodes.com
GS(th)
g
DSS
GSS
FS
oss
DSS
iss
rss
SOT-23
1 of 3
Mechanical Data
Min
1.0
60
80
•
•
•
•
•
•
•
•
•
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Symbol
Symbol
T
V
V
j
V
, T
R
Please click here to visit our online spice models database.
DGR
P
DSS
GSS
I
Case: SOT-23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
Gate
θ
D
JA
d
STG
Equivalent Circuit
Typ
2.0
3.5
1.0
2.0
2.0
5.0
80
22
11
⎯
⎯
⎯
Drain
2
O
3
Source
Fire Retardants.
Max
±10
0.5
3.0
5.0
0.5
5.0
⎯
⎯
50
25
20
20
-55 to +150
Value
Value
G
±20
250
300
417
60
60
TOP VIEW
D
Unit
mS
µA
nA
pF
pF
pF
ns
ns
V
V
Ω
A
S
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
GS
DS
GS
DS
GS
GS
DS
DS
ES
DS
= 10V, R
Test Condition
= 25V, V
=10V, I
= 0V, I
= ±15V, V
= V
= 10V, I
= 10V, V
= 10V, V
= 10V, R
GS
© Diodes Incorporated
Units
Units
°C/W
mW
mA
, I
°C
D
V
V
V
D
D
BS870
D
= 100μA
GS
L
DS
GS
D
= 0.2A
= 250μA
= 0.2A
DS
= 150Ω,
= 100Ω
May 2008
= 0V
= 0V
= 7.5V
= 0V
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BS870 Summary of contents
Page 1
... 10V 1.0MHz 2.0 5 10V 5 10V Fire Retardants © Diodes Incorporated BS870 °C = 100μ 250μ 150Ω 100Ω D May 2008 ...
Page 2
... I , DRAIN CURRENT (A) D Fig. 2 On-Resistance vs. Drain Current GATE TO SOURCE VOLTAGE (V) GS Fig. 4 On-Resistance vs. Gate-Source Voltage © Diodes Incorporated BS870 1.0 18 May 2008 ...
Page 3
... Packaging 3000/Tape & Reel 2006 2007 2008 2009 2010 Aug Sep Oct Nov SOT-23 Min Max 0.37 0.51 1.20 1.40 2.30 2.50 0.89 1.03 0.45 0.60 1.78 2.05 2.80 3.00 0.013 0.10 0.903 1.10 0.45 0.61 0.085 0.180 0° 8° Z 3.4 G 0.7 X 0.9 Y 1.4 C 2.0 E 0.9 © Diodes Incorporated BS870 2011 2012 Y Z Dec D May 2008 ...