BS870 Diodes, Inc., BS870 Datasheet - Page 2

• Manufacturer Part Number: BS870
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Diodes, Inc.

BS870
Document number: DS11302 Rev. 14 - 2
150
400
350
300
250
200
100
0.8
0.6
50
1.0
0.4
0.2
Fig. 5 Max Power Dissipation vs. Ambient Temperature
2.0
1.5
1.0
0.5
0
0
-55
0
0
0
Fig. 3 On-Resistance vs. Junction Temperature
-30
25
T , AMBIENT TEMPERATURE (°C)
V , DRAIN-SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE ( C)
A
DS
Fig. 1 On-Region Characteristics
j
1
50
-5
75
20
2
100 125
45
3
70
150
95
4
°
175
120
200
145
5
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7
6
5
4
3
0
6
5
4
3
2
1
0
2
1
0
0
Fig. 4 On-Resistance vs. Gate-Source Voltage
Fig. 2 On-Resistance vs. Drain Current
2
V
GS
0.2
, GATE TO SOURCE VOLTAGE (V)
4
I , DRAIN CURRENT (A)
D
6
0.4
8
10
0.6
12
14
0.8
© Diodes Incorporated
16
BS870
1.0
May 2008
18