BS817 Diodes, Inc., BS817 Datasheet
BS817
Manufacturer Part Number
BS817
Description
P-channel Enhancement Mode Dmos Transistor
Manufacturer
Diodes, Inc.
Datasheet
1.BS817.pdf
(2 pages)
Features
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Mechanical Data
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Maximum Ratings
Inverse Diode
Notes:
DS11401 Rev. D-3
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed) (Note 2)
Drain Current (continuous)
Power Dissipation @ T
Operating and Storage Temperature Range
Max Forward Current (continuous)
Forward Voltage Drop (typical)
@ V
High Breakdown Voltage
High Input Impedance
Fast Switching Speed
Specially Suited for Telephone Subsets
Ideal for Automated Surface Mount Assembly
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections (see Diagram)
Marking: S17
Weight: 0.008 grams (approx.)
GS
= 0, I
1. Device mounted on Ceramic Substrate 0.7mm x 2.5cm
2. Pulse Test: Pulse width = 80µs, duty cycle = 1%.
F
= 0.3A, T
@ T
Characteristic
Characteristic
C = 50°C (Note 1)
j
= 25°C
A
= 25°C unless otherwise specified
@ T
A
= 25°C unless otherwise specified
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
E
2
1 of 2
G
area.
Symbol
Symbol
T
-V
-V
TOP VIEW
j
, T
V
Pd
-I
V
DGS
I
DSS
GS
F
D
F
STG
G
D
H
D
A
S
J
B
K
C
-55 to +150
L
Value
Value
0.85
200
200
±20
100
310
0.3
M
All Dimensions in mm
Dim
G
M
A
B
C
D
E
H
K
J
L
BS817
SOT-23
0.013
0.076
0.37
1.19
2.10
0.89
0.45
1.78
2.65
0.89
0.45
Min
Unit
Unit
mW
mA
°C
V
V
V
A
V
0.178
Max
0.51
1.40
2.50
1.05
0.61
2.05
3.05
0.15
1.10
0.61
BS817
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BS817 Summary of contents
Page 1
... STG Symbol area BS817 SOT-23 Dim Min A 0.37 B 1. 0.89 E 0.45 G 1.78 H 2.65 J 0.013 M K 0. 0.076 0.178 All Dimensions in mm Value Unit 200 V 200 V ±20 V 100 mA 310 mW -55 to +150 °C Value Unit 0.3 A 0.85 V Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 BS817 ...
Page 2
... 2.8 3 2.8V Note 1 — 320 K/W — 400 K/W Note 20V 8.0 — 1.0MHz 1 10V 5 100W — GATE-SOURCE VOLTAGE (VOLTS 0. 1.0mA D = 20mA 10V 0. BS817 ...