BS817 Diodes, Inc., BS817 Datasheet - Page 2

• Manufacturer Part Number: BS817
• Description: P-channel Enhancement Mode Dmos Transistor
• Manufacturer: Diodes, Inc.

Electrical Characteristics
DS11401 Rev. D-3
Notes:
Drain-Source Breakdown Voltage
Gate-Body Leakage Current
Drain-Source Cutoff Current
Gate-Source Threshold Voltage
Drain-Source ON Resistance
Thermal Resistance, Junction to Substrate Backside
Thermal Resistance, Junction to Ambient Air
Input Capacitance
Output Capacitance
Feedback Capacitance
Switching Times
Turn-On Time
Turn-Off Time
200
500
400
100
300
0
1. Device mounted on ceramic substrate 0.7mm x 2.5 cm
2. Pulse test: Pulse width = 80µs, duty cycle = 1%.
0
T , SUBSTRATE TEMPERATURE ( C)
SB
Fig. 1, Power Derating Curve
Characteristic
100
@ T
A
= 25°C unless otherwise specified
See Note 1
-V
Symbol
-V
r
R
DS(ON)
-I
-I
-I
(BR)DSS
R
C
C
t
C
t
OFF
GS(th)
GSS
DSS
DSX
qJSB
ON
qJA
oss
iss
rss
200
2
2 of 2
area.
Min
200
100
—
—
—
—
—
—
—
—
10
1
Fig. 2, Drain-Source Resistance vs Gate-Source Voltage
0
Typ
230
2.8
8.0
1.5
5.0
—
—
30
—
—
58
15
-V
GS
, GATE-SOURCE VOLTAGE (VOLTS)
Max
320
400
1.0
3.5
10
30
50
—
—
—
Unit
K/W
K/W
nA
nA
µA
pF
ns
W
V
V
10
Note 1
-I
-V
-V
Note 1
f = 1.0MHz
-V
-V
-V
-V
-V
R
D
DS
GS
GS
D
GS
DS
GS
DS
= 100µA, V
= 100W
Test Condition
= 70V, -V
= 2.8V, -I
= 10V, -V
= 15V, V
= 130V, V
= V
= 20V, V
DS
-V
T = 25 C
, -I
DS
A
= 0.1V
GS
D
DS
D
GS
GS
DS
GS
= 1.0mA
= 20mA
= 0
= 0
= 0,
= 0.2V
= 10V,
= 0
BS817
20