NDT410EL Fairchild Semiconductor, NDT410EL Datasheet - Page 2

• Manufacturer Part Number: NDT410EL
• Description: N-channel Logic Level Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

ELECTRICAL CHARACTERISTICS
Symbol
DRAIN-SOURCE AVALANCHE RATINGS
W
I
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
AR
DSS
GSSF
GSSR
D(on)
D(on)
r
D(off)
f
FS
GS(th)
DS(ON)
iss
oss
rss
g
gs
gd
DSS
DSS
Parameter
Single Pulse Drain-Source Avalanche Energy V
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 2)
(Note 2)
(T
A
(Note 2)
= 25°C unless otherwise noted)
Conditions
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
DD
GS
DS
GS
GS
DS
GS
GS
DS
DS
DD
GEN
DS
= 50 V, I
= 0 V, I
= 80 V, V
= 20 V, V
= -20 V, V
= V
= 5 V, I
= 5 V, V
= 10 V, I
= 25 V, V
= 50 V, I
= 80 V, I
= 5 V, R
GS
, I
D
D
D
D
D
D
DS
= 250 µA
D
GEN
GS
= 250 µA
= 2.1 A
= 2.1 A
GS
= 2.1 A, V
= 10A
DS
DS
= 5 V
= 2.1 A,
= 0 V
= 0 V,
= 0 V
= 0 V
= 25
GS
= 5 V
T
T
T
J
J
J
= 55°C
= 125°C
= 125°C
Min
0.65
100
10
1
Typ
0.37
528
1.5
1.1
0.2
1.5
5.6
10
85
20
72
49
47
6
9
Max
-100
0.25
100
120
1.5
0.5
15
10
10
20
80
80
16
1
2
NDT410EL Rev. B1
Units
mJ
µA
µA
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
A
V
V
A
S