NDT410EL Fairchild Semiconductor, NDT410EL Datasheet - Page 5

• Manufacturer Part Number: NDT410EL
• Description: N-channel Logic Level Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
V
GS
1 3 0 0
1 0 0 0
5 0 0
3 0 0
2 0 0
1 0 0
1.15
1.05
0.95
5 0
1 0
Figure 9. Capacitance Characteristics.
1.1
0.9
0.1
Figure 7. Breakdown Voltage Variation with
1
-50
Figure 11. Switching Test Circuit.
I
D
R
0.2
= 250µA
Temperature.
-25
GEN
f = 1 MHz
V
GS
= 0 V
V
DS
0
0.5
T
J
, DRAIN TO SOURCE VOLTAGE (V)
V
, JUNCTION TEMPERATURE (°C)
IN
25
G
1
50
2
D
S
V
75
DD
5
R
100
L
(continued)
D U T
1 0
125
C iss
C oss
2 0
C rss
150
V
O U T
175
5 0
V
V
t
OUT
d(on)
IN
0.05
0.01
1 0
Figure 10. Gate Charge Characteristics.
0.5
0.1
8
6
4
2
0
1 0
Figure 8. Body Diode Forward Voltage
1 0 %
5
1
0
0.4
Figure 12. Switching Waveforms.
GS
I
V
D
Variation with Current and Temperature.
T = 125°C
= 2.1A
J
= 0V
t
5 0 %
on
V
1 0 %
SD
5
0.6
, BODY DIODE FORWARD VOLTAGE (V)
t
9 0 %
PULSE WIDTH
r
Q
g
, GATE CHARGE (nC)
25°C
1 0
0.8
t
d(off)
V
DS
5 0 %
-55°C
= 20V
9 0 %
1 5
1
t
1 0 %
off
9 0 %
NDT410EL Rev. B1
50V
80V
INVERTED
t
f
1.2
2 0