SIR496DP Vishay, SIR496DP Datasheet - Page 3

• Manufacturer Part Number: SIR496DP
• Description: N-channel 20-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68859
S-82019-Rev. A, 01-Sep-08
0.0060
0.0054
0.0048
0.0042
0.0036
0.0030
70
56
42
28
14
10
0
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
0.0
0
0
I
D
V
= 10 A
0.5
14
GS
6
V
DS
= 10 thru 4 V
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
V
V
- Total Gate Charge (nC)
I
D
GS
GS
V
DS
- Drain Current (A)
Gate Charge
1.0
28
12
= 10 V
= 4.5 V
= 5 V
V
DS
= 10 V
1.5
42
18
V
DS
V
GS
= 15 V
2.0
56
24
= 3 V
New Product
2.5
70
30
2000
1600
1200
800
400
1.8
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
- 50
0
0
I
D
C
On-Resistance vs. Junction Temperature
= 20 A
- 25
rss
T
4
V
V
C
GS
Transfer Characteristics
DS
1
T
= 125 °C
0
J
C
T
- Gate-to-Source Voltage (V)
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
oss
C
iss
= 25 °C
25
Capacitance
8
50
2
Vishay Siliconix
12
75
SiR496DP
T
C
100
= - 55 °C
V
V
3
www.vishay.com
GS
GS
16
= 10 V
= 4.5 V
125
150
20
4
3