SIR496DP Vishay, SIR496DP Datasheet - Page 4

• Manufacturer Part Number: SIR496DP
• Description: N-channel 20-v D-s Mosfet
• Manufacturer: Vishay

SiR496DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.001
0.01
100
0.4
0.2
0.0
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
T
V
J
SD
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
- Temperature (°C)
0.6
50
75
0.8
I
D
0.01
T
100
0.1
10
J
= 250 µA
100
1
= 25 °C
0.01
Limited by R
I
1.0
D
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
= 5 mA
125
T
A
GS
= 25 °C
> minimum V
New Product
V
1.2
150
DS(on)
0.1
DS
- Drain-to-Source Voltage (V)
*
GS
BVDSS Limited
at which R
1
0.020
0.016
0.012
0.008
0.004
0.000
DS(on)
200
160
120
80
40
10
0
0
0 .
0
is specified
0
1
I
On-Resistance vs. Gate-to-Source Voltage
D
Single Pulse Power, Junction-to-Ambient
10 ms
1 s
10 s
1 ms
100 ms
DC
1
= 20 A
2
V
0.01
100
GS
3
- Gate-to-Source Voltage (V)
4
Time(s)
0.1
5
S-82019-Rev. A, 01-Sep-08
Document Number: 68859
6
7
1
T
T
J
J
8
= 125 °C
= 25 °C
9
10
1
0