SIR414DP Vishay, SIR414DP Datasheet - Page 3

• Manufacturer Part Number: SIR414DP
• Description: N-channel 40-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 64727
S09-0319-Rev. A, 02-Mar-09
0.0030
0.0025
0.0020
0.0015
10
70
56
42
28
14
8
6
4
2
0
0
0.0
0
0
I
D
= 20 A
10
15
On-Resistance vs. Drain Current
V
0.5
V
DS
Q
GS
Output Characteristics
g
- Drain-to-Source Voltage (V)
20
V
30
- Total Gate Charge (nC)
I
= 10 V thru 3 V
D
DS
- Drain Current (A)
Gate Charge
= 20 V
V
V
GS
GS
1.0
30
45
= 4.5 V
= 10 V
V
DS
40
60
= 24 V
1.5
50
75
New Product
2.0
60
90
6000
4500
3000
1500
2.0
1.7
1.4
1.1
0.8
0.5
2.0
1.5
1.0
0.5
0.0
0
- 50
0.0
0
I
C
D
rss
On-Resistance vs. Junction Temperature
= 20 A
- 25
0.6
6
V
V
DS
GS
Transfer Characteristics
T
0
C
J
oss
T
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
iss
= 125 °C
25
Capacitance
1.2
T
12
C
= 25 °C
50
Vishay Siliconix
1.8
18
V
75
GS
SiR414DP
= 10 V
www.vishay.com
V
100
GS
T
2.4
C
24
= 4.5 V
125
150
3.0
30
3